US Patent Issued to MITSUBISHI ELECTRIC on July 8 for "Semiconductor device having semiconductor substrate including hydrogen-related donor, and manufacturing method therefor" (Japanese Inventor)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,878, issued on July 8, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).

"Semiconductor device having semiconductor substrate including hydrogen-related donor, and manufacturing method therefor" was invented by Tomohiro Tamaki (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is formed using a semiconductor substrate having a first main surface and a second main surface. A first semiconductor region of a first conductivity type is formed between the first main surface and the second main surface of the semiconductor substrate. A second semiconductor region is formed between the first semiconductor region and the first main...