US Patent Issued to MITSUBISHI ELECTRIC on July 15 for "Semiconductor device and power conversion device" (Japanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,943, issued on July 15, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).

"Semiconductor device and power conversion device" was invented by Kohei Ebihara (Tokyo) and Shiro Hino (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "To mitigate adverse effects on a surface electrode of a semiconductor device. The semiconductor device includes: a first well region formed in a surface layer of an upper surface of a drift layer; a gate electrode; a second well region surrounding the first well region as seen in plan view; and a gate portion covering an interlayer insulation film and the gate electrode exposed from the interlayer insulation film. An out...