US Patent Issued to MITSUBISHI ELECTRIC on July 1 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,390, issued on July 1, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).

"Semiconductor device" was invented by Marika Nakamura (Tokyo), Shigeyoshi Usami (Tokyo), Yuki Takiguchi (Tokyo), Takahiro Yamada (Tokyo), Hisashi Saito (Tokyo), Tatsuro Watahiki (Tokyo) and Eiji Yagyu (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A first nitride semiconductor layer and a second nitride semiconductor layer are laminated in a first direction. The first and second nitride semiconductor layers form a heterojunction, and a two-dimensional carrier gas is induced in the first nitride semiconductor layer. A drain electrode is opposite to a source electrode via...