ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,531,493, issued on Jan. 20, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).
"Semiconductor device and power conversion device" was invented by Yukihiko Wada (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "In this semiconductor device, an emitter electrode of a power semiconductor element includes a first sub-electrode provided in a region including a central portion of a front surface of a semiconductor substrate and a second sub-electrode provided in a region not including the central portion of the front surface of the semiconductor substrate. A first bonding wire connects the first sub-electrode and an emitter terminal. A second bonding wire...