US Patent Issued to Mitsubishi Electric on Jan. 20 for "Semiconductor device and method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,793, issued on Jan. 20, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device and method of manufacturing semiconductor device" was invented by Yosuke Nakata (Tokyo), Yuji Sato (Tokyo) and Taketoshi Shikano (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "An object is to provide a technique capable of reducing stress in the entire semiconductor device. The semiconductor device includes a plurality of sub-modules including a first sealing member, an insulating substrate provided with a first circuit pattern electrically connected to at least one of the conductive plates of the plurality of sub-modules, connection members elect...