ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,868, issued on Jan. 13, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).
"Gate drive circuit and power conversion device using same" was invented by Yoshiaki Ishiguro (Tokyo) and Kohei Onda (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure includes: a gate drive unit which applies a gate drive voltage to a control terminal of a semiconductor switching element so as to drive the semiconductor switching element; a voltage feedback unit which is connected to a high-potential main terminal of the semiconductor switching element and which causes a voltage of the high-potential main terminal to be fed back to the gate drive un...