US Patent Issued to Mitsubishi Electric on Feb. 3 for "Semiconductor laser device" (Japanese Inventor)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,542,426, issued on Feb. 3, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor laser device" was invented by Kimio Shigihara (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor laser device includes a first conductivity type cladding layer having a refractive index nc1, a first conductivity type side optical guide layer, an active layer, a second conductivity type side optical guide layer, and a second conductivity type cladding layer of nc2 laminated in order on a first conductivity type semiconductor substrate, wherein an oscillation wavelength is Lambda, a first conductivity type low refractive index layer of n1 lower t...