ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,548, issued on Feb. 18, was assigned to Mitsubishi Electric Corp. (Tokyo).
"Semiconductor device" was invented by Yuri Kunishige (Tokyo) and Hiroyuki Nakano (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate, an electrode and a wire disposed on the semiconductor substrate, and a protective film covering the semiconductor substrate. The protective film includes a main protective film covering at least portion of the electrode and at least portion of the wire, and a dummy protective film independently disposed at each of corners of the semiconductor substrate. The main protective film has a ...