US Patent Issued to Mitsubishi Electric on Feb. 18 for "Power semiconductor device and method for manufacturing power semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,232,300, issued on Feb. 18, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Power semiconductor device and method for manufacturing power semiconductor device" was invented by Noriyuki Besshi (Tokyo), Ryuichi Ishii (Tokyo), Masaru Fuku (Tokyo) and Kazuya Fukuhara (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device includes: a plurality of power modules including control terminals; a heat sink, on which the plurality of power modules are mounted; and a control substrate, to which the control terminals are fixed. The plurality of power modules each include a first protruding portion close to the control terminals, and a ...