US Patent Issued to MITSUBISHI ELECTRIC on Feb. 10 for "Semiconductor device and method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,389, issued on Feb. 10, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).

"Semiconductor device and method of manufacturing semiconductor device" was invented by Hiroaki Hayashi (Tokyo) and Eiji Yagyu (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "An object is to provide a technique that ensures to reduce a parasitic resistance of a semiconductor device while enhancing a breakdown voltage property of a semiconductor device. A portion of a second semiconductor layer exposed from a first semiconductor layer corresponds to a concave portion of a laminated structure and the first semiconductor layer or an adjacent portion of the first semiconduc...