US Patent Issued to Mitsubishi Electric on Dec. 9 for "Silicon carbide epitaxial growth device and method of manufacturing silicon carbide epitaxial wafer" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,492,488, issued on Dec. 9, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Silicon carbide epitaxial growth device and method of manufacturing silicon carbide epitaxial wafer" was invented by Masashi Sakai (Tokyo), Shinichiro Katsuki (Tokyo), Kazuo Kobayashi (Tokyo) and Yasunari Hino (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a silicon carbide epitaxial growth device capable of fostering epitaxial growth on a silicon carbide substrate. Mounting a wafer holder loaded with a silicon carbide substrate and a tantalum carbide member to a turntable in a susceptor, and supplying a growth gas, a doping gas, and a carrier gas into the ...