ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,404, issued on Dec. 9, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).
"Semiconductor device including stop islands and method for manufacturing semiconductor device" was invented by Kunihiko Nishimura (Tokyo), Masahiro Fujikawa (Tokyo), Shuichi Hiza (Tokyo), Shinya Nishimura (Tokyo), Ken Imamura (Tokyo), Yuki Takiguchi (Tokyo) and Eiji Yagyu (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A split in a dicing street in a semiconductor film is prevented. A semiconductor device includes: a first dicing street passing between a plurality of element regions on which a plurality of protective films are formed one-to-one, the first dicing street e...