US Patent Issued to MITSUBISHI ELECTRIC on Dec. 30 for "Silicon carbide semiconductor device and power conversion device" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,976, issued on Dec. 30, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).

"Silicon carbide semiconductor device and power conversion device" was invented by Kotaro Kawahara (Tokyo) and Shiro Hino (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device includes: a dummy sense region; and a drift layer of a first conductivity type, wherein a MOSFET with a built-in SBD including a first well region of a second conductivity type connected to a source electrode is formed in an active region, a MOSFET with a built-in SBD including a second well region of a second conductivity type connected to a sense pad is formed in...