US Patent Issued to MITSUBISHI ELECTRIC on Dec. 30 for "Semiconductor device and method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,648, issued on Dec. 30, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).

"Semiconductor device and method of manufacturing semiconductor device" was invented by Shinya Nishimura (Tokyo), Shuichi Hiza (Tokyo), Kunihiko Nishimura (Tokyo) and Eiji Yagyu (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first substrate, a semiconductor layer consisting of a nitride-based compound semiconductor, and a bonding layer bonded to the first substrate and the semiconductor layer between the first substrate and the semiconductor layer, and containing at least one of constituent elements of the nitride-based compound semico...