ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,489,275, issued on Dec. 2, was assigned to Mitsubishi Electric Corp. (Tokyo).
"Method for manufacturing optical semiconductor device" was invented by Keisuke Matsumoto (Tokyo) and Ryoko Suzuki (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided here are: a mesa strip which has an n-type cladding layer, an active layer and a p-type cladding layer that are stacked sequentially on a surface of an n-type substrate; Fe-doped semi-insulating layers which are embedded along both sides of the mesa stripe, each up to a height higher than the mesa stripe; n-type blocking layers which are stacked on respective surfaces of the Fe-doped semi-insulating lay...