US Patent Issued to Mitsubishi Electric on Dec. 16 for "Semiconductor element bonding substrate, semiconductor device, and power conversion device" (Japanese Inventor)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,201, issued on Dec. 16, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor element bonding substrate, semiconductor device, and power conversion device" was invented by Satoru Ishikawa (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor element bonding substrate according to the present invention includes an insulating plate, and a metal pattern bonded to a main surface of the insulating plate. A main surface of the metal pattern on an opposite side of the insulating plate includes a bonding region to which a semiconductor element is bonded by a solder. The metal pattern includes at least one concave part located in ...