US Patent Issued to Mitsubishi Electric on Dec. 16 for "Semiconductor device comprising semiconductor element; insulating component; lead electrode; and first bonding material, second bonding material, third bonding material, and fourth bonding material made of a same material" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,135, issued on Dec. 16, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device comprising semiconductor element; insulating component; lead electrode; and first bonding material, second bonding material, third bonding material, and fourth bonding material made of a same material" was invented by Masayuki Nishiyama (Tokyo), Rei Yoneyama (Tokyo), Naoki Yoshimatsu (Tokyo), Shintaro Araki (Tokyo), Tatsuya Kawase (Tokyo) and Hiroyuki Masumoto (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: an insulating layer; a circuit pattern on an upper surface of the insulating layer; a semiconductor element bo...