US Patent Issued to Mitsubishi Electric on Dec. 16 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,675, issued on Dec. 16, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device" was invented by Kenji Suzuki (Tokyo), Yuki Haraguchi (Tokyo), Haruhiko Minamitake (Tokyo), Taiki Hoshi (Tokyo), Hidenori Koketsu (Tokyo) and Yusuke Miyata (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A first buffer layer includes: a first region containing protons and in contact with a drift layer; a second region between the first region and a first principal surface containing protons, and in contact with the first region; and a third region between the second region of the first buffer layer and the first principal surface. An impurity conce...