ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,635, issued on Dec. 16, was assigned to Mitsubishi Electric Corp. (Tokyo).
"Semiconductor device" was invented by Takahiro Nakatani (Tokyo), Tetsuya Nitta (Tokyo) and Koichi Nishi (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an insulated gate bipolar transistor region having a base layer of a second conductivity type provided in a surface layer of the semiconductor substrate on a first main surface side, an emitter layer of a first conductivity type having an impurity concentration higher than that of a drift layer selectively provided in the surface layer of the base layer on the first main surface side, a p...