ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,697, issued on Aug. 5, was assigned to Mitsubishi Electric Corp. (Tokyo).
"Semiconductor device and method for manufacturing the same" was invented by Hiroyuki Okazaki (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor substrate (1) includes a front surface and a back surface opposite to each other, and a through-hole (9) penetrating from the back surface to the front surface. A metal film (10) surrounding the through-hole (9) is formed in a ring shape on the front surface. A front-surface electrode (6) includes a wiring electrode (11,12) covering the through-hole (9) and the metal film (10) and is joined to the front surface outsi...