US Patent Issued to Mitsubishi Electric on Aug. 26 for "Semiconductor device and method for controlling semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,337, issued on Aug. 26, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device and method for controlling semiconductor device" was invented by Koichi Nishi (Tokyo), Masanori Tsukuda (Tokyo), Shinya Soneda (Tokyo) and Akihiko Furukawa (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "When a positive gate voltage is applied to a first one of a first gate electrode and a second gate electrode, and current flows from a collector electrode to an emitter electrode, a semiconductor device applies a positive gate voltage to a second one of the first gate electrode and the second gate electrode. When a positive gate voltage is applied ...