US Patent Issued to Mitsubishi Electric on Aug. 12 for "Semiconductor device and method of manufacturing semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,648, issued on Aug. 12, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device and method of manufacturing semiconductor device" was invented by Ayanori Gatto (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device capable of suppressing breakdown of the semiconductor device by a full depletion of a semiconductor layer. The semiconductor device includes: a first semiconductor layer of a first conductivity type provided on a second main surface side of a semiconductor base body; a second semiconductor layer of the first conductivity type having a first conductivity type impurity concentration lower t...