US Patent Issued to MITSUBISHI ELECTRIC on Aug. 12 for "Method of manufacturing semiconductor element" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,934, issued on Aug. 12, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).

"Method of manufacturing semiconductor element" was invented by Masahiro Fujikawa (Tokyo) and Eiji Yagyu (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "It is an object of the present disclosure to provide a method of manufacturing a thin semiconductor element having a low defect rate. A method of manufacturing a semiconductor element according to the present disclosure includes: forming a metal thin film on an electrode protection layer of a circuit element substrate and a support substrate in vacuum; attaching the metal thin film of the circuit element substrate and t...