US Patent Issued to MITSUBISHI ELECTRIC on April 8 for "Method for estimating parameters of a junction of a power semi-conductor element and power unit" (French Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,270,715, issued on April 8, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).

"Method for estimating parameters of a junction of a power semi-conductor element and power unit" was invented by Nicolas Degrenne (Rennes, France), Nicolas Voyer (Rennes, France) and Stefan Mollov (Rennes, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a method for estimating parameters of a junction of a power semi-conductor element comprising: *-Detecting at least one stable on-line operating condition through measurements (2, 3, 4) of Von, Ion, Tc on a semi-conductor module (1) where Ion is a current for which the on-state voltage ...