US Patent Issued to MITSUBISHI ELECTRIC on April 22 for "Semiconductor device, power conversion device and method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,628, issued on April 22, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).

"Semiconductor device, power conversion device and method of manufacturing semiconductor device" was invented by Masanao Ito (Tokyo) and Kohei Ebihara (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor layer including a super junction layer in which an n-type pillar layer and a p-type pillar layer are alternately disposed and a p-type withstand voltage holding structure formed on an upper layer part of the semiconductor layer to surround an active region. At least one withstand voltage holding structure overlaps with the supe...