ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,447, issued on April 15, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).
"Silicon carbide semiconductor device" was invented by Takaaki Tominaga (Tokyo) and Shiro Hino (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a silicon carbide semiconductor device, and includes a p-type second well region provided as an upper layer portion of a semiconductor layer; an n-type second impurity region provided as an upper layer portion of the second well region; a p-type second well contact region provided as an upper layer portion of the second well region; a field insulating film provided on the second well region; a se...