ALEXANDRIA, Va., April 2 -- United States Patent no. 12,266,706, issued on April 1, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).
"Semiconductor device and power converter" was invented by Yutaka Fukui (Tokyo), Katsutoshi Sugawara (Tokyo), Hideyuki Hatta (Tokyo), Hidenori Koketsu (Tokyo), Rina Tanaka (Tokyo) and Yusuke Miyata (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a semiconductor device having trench gates. The semiconductor device includes the following: a first semiconductor layer; a first semiconductor region selectively disposed in the upper layer of the first semiconductor layer; a second semiconductor region in contact with the first semiconductor re...