US Patent Issued to Mitsubishi Electric on April 1 for "Method of manufacturing silicon carbide semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., April 2 -- United States Patent no. 12,266,531, issued on April 1, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Method of manufacturing silicon carbide semiconductor device" was invented by Junya Miwa (Tokyo), Toshikazu Tanioka (Tokyo) and Daisuke Taniguchi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a silicon carbide semiconductor device according to the technology disclosed in the present specification includes: forming a drift layer on an upper surface of a silicon carbide semiconductor substrate; forming a hard mask on the upper surface of the drift layer by anisotropic etching; and forming a first ion-implanted region in a surface layer of the...