US Patent Issued to MITSUBISHI CHEMICAL on Nov. 18 for "GaN substrate wafer and production method for same" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,108, issued on Nov. 18, was assigned to MITSUBISHI CHEMICAL Corp. (Tokyo).

"GaN substrate wafer and production method for same" was invented by Yuuki Enatsu (Tokyo) and Kenji Iso (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a GaN substrate wafer with an improved productivity, which can be preferably used in the production of a nitride semiconductor device having a horizontal device structure. The GaN substrate wafer is a (0001)-oriented GaN substrate wafer that includes a first region arranged on an N-polar side and a second region, which is arranged on a Ga-polar side and has a minimum thickness, via a regrowth interface thereb...