US Patent Issued to MITSUBISHI CHEMICAL on April 29 for "GaN substrate wafer and method for manufacturing same" (Japanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,686, issued on April 29, was assigned to MITSUBISHI CHEMICAL Corp. (Tokyo).

"GaN substrate wafer and method for manufacturing same" was invented by Kenji Iso (Tokyo), Yuuki Enatsu (Tokyo) and Kenji Shimoyama (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are: a GaN substrate wafer having a crystallinity suitable as a substrate for a semiconductor device as well as an improved productivity; and a method of producing the same. The GaN substrate wafer is a (0001)-oriented GaN substrate wafer that includes a first region arranged on an N-polar side and a second region arranged on a Ga-polar side via a regrowth interface therebetween. In t...