ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,740, issued on Oct. 7, was assigned to MIKRO MESA TECHNOLOGY Co. LTD. (Apia, Samoa).
"Micro light-emitting diode device" was invented by Li-Yi Chen (Tainan, Taiwan) and Hsin-Wei Lee (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A micro light-emitting diode device includes a substrate, a micro light-emitting diode, an isolation layer, and a cathode transparent electrode. The micro light-emitting diode is disposed on the substrate and includes a p-type III-nitride layer, n-type III-nitride layers with a layer number of m sequentially stacked above the p-type III-nitride layer, and an active layer between the p-type III-nitride layer an...