ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,326, issued on June 17, was assigned to MIKRO MESA TECHNOLOGY Co. LTD. (Apia, Samoa).
"Method of manufacturing micro devices" was invented by Li-Yi Chen (Tainan, Taiwan) and Hsiao-Fu Lu (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing micro devices includes: preparing a GaN-based epitaxial structure including a p-type GaN layer, a n-type GaN layer on the p-type GaN layer, and an undoped GaN layer on the n-type GaN layer; forming a photoresist layer on the GaN-based epitaxial structure with the undoped GaN layer contacting the photoresist layer; patterning the photoresist layer; performing a plasma etching proc...