ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,431, issued on July 29, was assigned to MIKRO MESA TECHNOLOGY Co. LTD. (Apia, Samoa).
"Micro light-emitting diode device" was invented by Li-Yi Chen (Tainan, Taiwan) and Hsin-Wei Lee (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A micro light-emitting diode device includes a substrate, a micro light-emitting diode, and a transparent top electrode. The micro light-emitting diode is disposed on the substrate and includes a p-type GaN layer, an n-type GaN layer above the p-type GaN layer, an n-doped InxAl(1-x)N layer above and in contact with the n-type GaN layer, and an active layer between the p-type GaN layer and the n-type GaN laye...