US Patent Issued to Microwave Technology on July 1 for "RF power transistor having off-axis layout" (California Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,391, issued on July 1, was assigned to Microwave Technology Inc. (Fremont, Calif.).

"RF power transistor having off-axis layout" was invented by Howard J. Sun (Newark, Calif.) and Guo-Gang Zhou (Kentfield, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high frequency RF power transistor includes first and second elongated mesas. In one example, the transistor is part of a millimeter wave MMIC power amplifier. From the top-down perspective, the two mesas are disposed in an off-axis and staggered orientation with respect to one another. A branched gate electrode is formed such that a first branch from a gate signal input location to the first ...