ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,499, issued on July 29, was assigned to Microsoft Technology Licensing LLC (Redmond, Wash.).
"Progressive thermal drying chamber for quantum circuits" was invented by Quang Thanh Tran (San Jose, Calif.), Judith Cutaran Aarts (San Jose, Calif.), John S. Hickman (Reno, Nev.) and Thanh Cong Dinh (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques are described herein that are capable of progressively thermally drying a quantum circuit. An inert gas is progressively heated by a heater element to provide a heated inert gas. Heated ambient air and the heated inert gas combine in a heating channel, causing a combination of the heate...