US Patent Issued to Micron Technology on Sept. 9 for "Hybrid parallel programming of single-level cell memory" (Italian Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,411,770, issued on Sept. 9, was assigned to Micron Technology Inc. (Boise, Idaho).

"Hybrid parallel programming of single-level cell memory" was invented by Umberto Siciliani (Rubano, Italy), Violante Moschiano (Avezzano, Italy) and Walter Di Francesco (Avezzano, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a page buffer with multiple registers and a memory array, configured as single-level cell (SLC) memory, including a set of sub-blocks coupled with the page buffer. Control logic is operatively coupled with the page buffer and causes a first page of SLC data to be stored in the multiple registers. The control logic ca...