US Patent Issued to Micron Technology on Sept. 9 for "Accessing memory cells in a vertical memory array" (Italian Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,626, issued on Sept. 9, was assigned to Micron Technology Inc. (Boise, Idaho).

"Accessing memory cells in a vertical memory array" was invented by Paolo Fantini (Vimercate, Italy), Corrado Villa (Sovico, Italy), Stefan Frederik Schippers (Peschiera del Garda, Italy) and Lorenzo Fratin (Buccinasco, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a memory apparatus and a method for accessing a 3D vertical memory array. The 3D vertical memory array comprises word lines organized in planes separated from each other by insulating material, bit lines perpendicular to the word line planes, memory cells coupled between ...