US Patent Issued to Micron Technology on Sept. 30 for "Semiconductor device and method of forming the same" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,409, issued on Sept. 30, was assigned to Micron Technology Inc. (Boise, Idaho).

"Semiconductor device and method of forming the same" was invented by Yutaka Nakae (Higashihiroshima, Japan) and Nobuyuki Nakamura (Higashihiroshima, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus includes a through-silicon via (TSV) including a conductive material; a first contact plug having an upper surface and a bottom surface directly connected to an upper surface of the TSV; a first wiring directly connected to the upper surface of the first contact plug; a second wiring having an upper surface; a second contact plug having an upper surface and ...