US Patent Issued to Micron Technology on Sept. 30 for "Reactor to form films on sidewalls of memory cells" (Idaho Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,175, issued on Sept. 30, was assigned to Micron Technology Inc. (Boise, Idaho).

"Reactor to form films on sidewalls of memory cells" was invented by Santanu Sarkar (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Apparatus and methods related to forming films on sidewalls of memory cell stacks in memory and logic devices. In one approach, a silicon wafer is held in a chamber of an atomic layer deposition (ALD) reactor. A temperature in the reactor is controlled to a first temperature (e.g., room temperature or below) where a first gas reactant that is provided into the chamber condenses and is adsorbed on the target wafer or substrate. ...