US Patent Issued to Micron Technology on Sept. 30 for "Out-of-order programming of first wordline in a physical unit of a memory device" (Idaho, California Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,430,246, issued on Sept. 30, was assigned to Micron Technology Inc. (Boise, Idaho).

"Out-of-order programming of first wordline in a physical unit of a memory device" was invented by Deping He (Boise, Idaho) and Ching-Huang Lu (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory array comprising memory cells associated with a plurality of wordlines control logic that is to perform operations including: causing memory cells of a physical unit of the memory array to be programmed starting at a second wordline, which is adjacent to a first wordline of the memory array, and proceeding sequentially through a plur...