ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,407, issued on Sept. 30, was assigned to Micron Technology Inc. (Boise, Idaho).
"Memory device with low density thermal barrier" was invented by Pengyuan Zheng (Boise, Idaho), David Ross Economy (Boise, Idaho), Yongjun J. Hu (Boise, Idaho), Kent H. Zhuang (Boise, Idaho) and Robert K. Grubbs (Boise, Idaho).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices related to a memory device with a thermal barrier are described. The thermal barrier (e.g., a low density thermal barrier) may be positioned between an access line (e.g., a digit line or a word line) and a cell component. The thermal barrier may be formed on the surface of...