US Patent Issued to Micron Technology on Sept. 30 for "Memory device having tiers of 2-transistor memory cells" (Idaho Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,898, issued on Sept. 30, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device having tiers of 2-transistor memory cells" was invented by Kamal M. Karda (Boise, Idaho), Durai Vishak Nirmal Ramaswamy (Boise, Idaho), Haitao Liu (Boise, Idaho) and Karthik Sarpatwari (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments include apparatuses and methods of using the apparatuses. One of the apparatuses includes first, second, and third conductive structures, each having a length in a first direction, first and second memory cells spaced apart from each other in a second direction perpendicular to the first direction...