US Patent Issued to Micron Technology on Sept. 30 for "Dynamic interval for a memory device to enter a low power state" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,430,045, issued on Sept. 30, was assigned to Micron Technology Inc. (Boise, Idaho).

"Dynamic interval for a memory device to enter a low power state" was invented by Liang Ge (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for a dynamic interval for entering a low power state are described. A memory system or device may support a low power mode, which the memory system or device may enter in response to a command from a host system. In some cases, an amount of idle time observed by the host system before issuing such a command may vary based on a status of maintenance operations for the memory system or device. Ad...