US Patent Issued to Micron Technology on Sept. 30 for "Charge loss acceleration during programming of memory cells in a memory sub-system" (California Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,198, issued on Sept. 30, was assigned to Micron Technology Inc. (Boise, Idaho).

"Charge loss acceleration during programming of memory cells in a memory sub-system" was invented by Sheyang Ning (San Jose, Calif.), Lawrence Celso Miranda (San Jose, Calif.) and Zhengyi Zhang (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Control logic in a memory device causes a programming pulse of a set of programming pulses associated with a programming algorithm to be applied to a selected wordline associated with a set of memory cells to be programmed to a target voltage level representing a programming level. Voltage levels of the selected wor...