US Patent Issued to Micron Technology on Sept. 30 for "Apparatuses including a semiconductor transistor and methods for forming same" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,009, issued on Sept. 30, was assigned to Micron Technology Inc. (Boise, Idaho).

"Apparatuses including a semiconductor transistor and methods for forming same" was invented by Yoshikazu Moriwaki (Higashihiroshima, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Apparatuses including a semiconductor transistor and methods for forming same are described. An example apparatus includes an active region in a semiconductor substrate, an isolation region configured to isolate the active region, and a gate structure on the active region. The isolation region includes a dielectric material with an addition of a metal material in the dielectric material...