US Patent Issued to Micron Technology on Sept. 23 for "Method used in forming a memory array comprising strings of memory cells using pillars" (Idaho Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,265, issued on Sept. 23, was assigned to Micron Technology Inc. (Boise, Idaho).

"Method used in forming a memory array comprising strings of memory cells using pillars" was invented by John D. Hopkins (Meridian, Idaho) and Nancy M. Lomeli (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A liner is formed laterally-outside of individual channel-material strings in one of first tiers and in one of second tiers. The liners are isotropically etched to form void-spaces in the one second tier above the one first tier. Individual of the void-spaces are laterally-between the individual channel-material strings and the second-tier material in th...