US Patent Issued to Micron Technology on Sept. 23 for "Memory device including control gates having tungsten structure" (Idaho Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,553, issued on Sept. 23, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device including control gates having tungsten structure" was invented by Jordan D. Greenlee (Boise, Idaho), Rita J. Klein (Boise, Idaho), Everett Allen McTeer (Eagle, Idaho) and John Hopkins (Meridian, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a first dielectric material; a second dielectric material separated from the first dielectric material; a memory cell string including a pillar extending through the first and second dielectric materials...