US Patent Issued to Micron Technology on Sept. 23 for "Memory arrays comprising strings of memory cells with conductive islands" (Idaho Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,266, issued on Sept. 23, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory arrays comprising strings of memory cells with conductive islands" was invented by John D. Hopkins (Meridian, Idaho) and Jordan D. Greenlee (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers above a conductor tier. Strings of memory cells comprise channel-material-string constructions that extend through the insulative tiers and the conductive tiers into the cond...