US Patent Issued to Micron Technology on Sept. 23 for "Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells" (Idaho Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,282, issued on Sept. 23, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells" was invented by Haoyu Li (Boise, Idaho), John D. Hopkins (Meridian, Idaho), Collin Howder (Boise, Idaho) and Adam W. Saxler (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory array comprising strings of memory cells comprises a conductor tier comprising conductor material. Laterally-spaced memory blocks individually comprise a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strin...