US Patent Issued to Micron Technology on Sept. 2 for "Stack of horizontally extending and vertically overlapping features, methods of forming circuitry components, and methods of forming an array of memory cells" (Idaho, California Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,919, issued on Sept. 2, was assigned to Micron Technology Inc. (Boise, Idaho).

"Stack of horizontally extending and vertically overlapping features, methods of forming circuitry components, and methods of forming an array of memory cells" was invented by Sanh D. Tang (Boise, Idaho), Roger W. Lindsay (Boise, Idaho) and Krishna K. Parat (Palo Alto, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming circuitry components includes forming a stack of horizontally extending and vertically overlapping features. The features extend horizontally though a primary portion of the stack with at least some of the features extending farther i...